- Rigorously selected 3D NAND flash for great performance
- SLC Caching and DRAM Cache buffer technology improve R/W performance
- LDPC ECC technology and E2E (end to end) data protection prevent data R/W error and guarantees reliability
- Support TRIM command, wear leveling and garbage collection technology to enhance lifetime
- NCQ command and data shaping increase efficiency and lifespan
- S.M.A.R.T. monitoring system
Specifications
- Interface: PCIe Gen 4x4
- Support: NVMe 1.3
- Support: M.2 M key
- Capacity: 500GB
- Sequential R/W Speed: up to 5000MB/s / 2500MB/s
- Random R/W 4K IOPs: up to 400K / 500K
- TBW (SSD Endurance): 850TB
- Power Consumption: 6.3W
- Shock resistance: 1500G /0.5ms
- MTBF: 1.700.000 hours
- Uncorrectable Bit Error Rate (UBER): < 1 sector per 1016 bits read
- Dimension (W×L): 22×80 mm
- Weight: 8.5g
- Voltage: 3.3V
- Operating temperature: 0C to 70C
- SLC Caching: Yes
- DRAM Cache Buffer: Yes
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